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Typical Characteristics T C = 25°C unless otherwise noted
1000
100
10 μ s
500
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ? 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
100 μ s
STARTING T J = 25 o C
10
OPERATION IN THIS
1
AREA MAY BE
LIMITED BY r DS(ON)
1ms
10
0.1
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
10ms
DC
1
STARTING T J = 150 o C
1
10 100
200
0.01
0.1 1
10
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
125
PULSE DURATION = 80 μ s
125
100
DUTY CYCLE = 0.5% MAX
V DD = 15V
100
V GS = 10V
V GS = 7V
V GS = 6V
75
T J = 175 o C
75
T J = 25 C
T J = -55 C
50
25
0
o
o
50
25
0
V GS = 5V
T C = 25 o C
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
3
4
5 6
7
0
1 2 3
4
20
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
3.0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
2.5
18
16
V GS = 6V
2.0
1.5
1.0
14
12
V GS = 10V
0.5
0
V GS = 10V, I D = 61A
0
20 40
60
-80
-40
0 40 80 120 160
200
I D , DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
?200 8 Fairchild Semiconductor Corporation
4
FDB3652 _F085 Rev. A 1
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